NTE5496 NTE ELECTRONICS, NTE5496 Datasheet

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NTE5496

Manufacturer Part Number
NTE5496
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),10A I(T),TO-208AA
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5496

Rohs Compliant
YES
Description:
The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half−wave AC
control applications such as motor controls, heating controls, power supplies, or wherever half−wave
silicon gate−controlled, solid−state devices are needed.
Features:
D Glass−Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Blocking Voltage to 600 Volts
Absolute Maximum Ratings: (T
Peak Repetitive Off−State Blocking Voltage, V
Peak Non−Repetitive Reverse Voltage, V
RMS On−State Current (All Conduction Angles), I
Average On−State Current (T
Peak Non−Repetitive Surge Current, I
Circuit Fusing Considerations (T
Peak Gate Power Dissipation, P
Average Gate Power Dissipation, P
Peak Forward Gate Current, I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Stud Torque
NTE5491
NTE5492
NTE5494
NTE5496
NTE5491
NTE5492
NTE5494
NTE5496
(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage)
NTE5491, NTE5492, NTE5494
NTE5496
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Silicon Controlled Rectifier (SCR)
C
GT
stg
= +65°C), I
GM
J
NTE5491 thru NTE5496
J
= −40° to +125°C, t = 1 to 8.3ms), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
10 Amp, TO48
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
thJC
, V
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
t
. . . . . . . . . . . . . . . . . .
. . . . . . . . . .
−65° to +125°C
−65° to +150°C
30 in.lb.
500mW
2°C/W
93A
100V
200V
400V
600V
150V
300V
500V
720V
150A
2.0A
1.2A
25A
16A
5W
2
s

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NTE5496 Summary of contents

Page 1

... Silicon Controlled Rectifier (SCR) Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half−wave AC control applications such as motor controls, heating controls, power supplies, or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features: D Glass−Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability ...

Page 2

... NTE5491 NTE5492 NTE5494 NTE5496 Average Reverse Blocking Current NTE5491 NTE5492 NTE5494 NTE5496 Peak Forward Blocking Current Peak Reverse Blocking Current Peak On−State Voltage DC Gate−Trigger Current DC Gate−Trigger Voltage Gate Non−Trigger Voltage DC Holding Current Critical Rate−of−Rise of Off−State Voltage Note 1. Pulse Test: Pulse Width ≤ ...

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