NTE5496 NTE ELECTRONICS, NTE5496 Datasheet - Page 2

• Manufacturer Part Number: NTE5496
• Description: SILICON CONTROLLED RECTIFIER,600V V(DRM),10A I(T),TO-208AA
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5496

• Rohs Compliant: YES

Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.
Average Forward Blocking Current
Average Reverse Blocking Current
Peak Forward Blocking Current
Peak Reverse Blocking Current
Peak On−State Voltage
DC Gate−Trigger Current
DC Gate−Trigger Voltage
Gate Non−Trigger Voltage
DC Holding Current
Critical Rate−of−Rise of Off−State
NTE5492
NTE5494
NTE5496
NTE5492
NTE5494
NTE5496
NTE5491
NTE5491
Voltage
Parameter
J
Symbol
I
I
dv/dt
I
I
(14.28)
(30.33)
Gate
D(AV)
R(AV)
V
V
V
DRM
RRM
1.193
(11.5)
I
.562
Max
Max
.453
Max
I
GT
GD
TM
GT
H
Rated V
T
Rated V
T
Rated V
Rated V
T
I
V
V
Rated V
V
Rated V
T
TM
J
J
J
AK
AK
AK
C
= +125°C
= +125°C
= +125°C
= +125°C, Gate Open
= 50.3A Peak, Note 1
= 12VDC, R
= 12VDC, R
= 12V, Gate Open
DRM
DRM
DRM
RRM
DRM
RRM
Test Conditions
, R
, Exponential Waveform,
, Gate Open
, Gate Open,
, Gate Open
, Gate Open
L
= 50Ω, T
L
L
1/4−28 UNF−2A
Cathode
= 50Ω
= 50Ω
Anode
.200 (5.08) Max
J
= +125°C 0.25
Min Typ Max Unit
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.65 2.0
7.3
30
−
−
−
−
−
−
−
−
−
−
−
−
−
6.5
6.0
4.0
2.5
6.5
6.0
4.0
2.5
10
20
40
50
2
−
−
V/μs
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
V
V
V