NTE5513 NTE ELECTRONICS, NTE5513 Datasheet
NTE5513
Manufacturer Part Number
NTE5513
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-66
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5511.pdf
(2 pages)
Specifications of NTE5513
Rohs Compliant
YES
Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are in-
tended for use in power–control and power–switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75 C.
Features:
D Designed Especially for High–Volume Systems
D Readily Adaptable for PC Boards and Metal
D Low Switching Losses
D High di/dt and dv/dt Capabilities
D Shorted Emitter Gate–Cathode Construction
D Forward and Reverse Gate Dissipation Ratings
D All–Diffused Construction Assures Exceptional
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency
Transient Peak Reverse Voltage (Non–Repetitive), V
Peak Reverse Voltage (Repetitive), V
Peak Forward Blocking Voltage (Repetitive), V
Average DC Forward Current, I
RMS Forward Current (T
Peak Surge Current (For one cycle of applied voltage), i
Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I
Rate of Change of Forward Current (Note 1), di/dt
Gate Power (Peak, Forward, or Reverse, for 10 s duration, Note 2), P
Average Gate Power (Note 2), P
Operating Case Temperature Range, T
Storage Temperature Range, T
Note 1. V
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
Heat Sinks
Uniformity and Stability of Characteristics
NTE5511
NTE5512
NTE5513
NTE5511
NTE5512
NTE5513
NTE5511
NTE5512
NTE5513
(T
C
permissible.
FB
= +75 C mounted on heat sink, conduction angle or 180 )
= v
BOO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(min value), I
C
Silicon Controlled Rectifier (SCR)
= +75 C mounted on heat sink), I
stg
F(av)
between 50Hz and 400Hz, and with Resistive or Inductive Load)
GAV
NTE5511 thru NTE5513
GT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA, 0.5 s rise time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RM
C
(rep)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5 Amp
FBOM
D Direct–Soldered Internal Construction Assures
D Symmetrical Gate–Cathode Construction Pro-
D All–Welded Construction and Hermetic Sealing
D Low Leakage Currents, Forward and Reverse
D Low Forward Voltage Drop at High Current
D Low Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(rep)
Exceptional Resistance to Fatigue
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
Levels
RM
FM(surge)
(non–rep)
FRMS
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
2
t
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . .
–40 to +100 C
–40 to +125 C
15A
200A/ s
500mW
330V
660V
700V
200V
400V
600V
600V
600V
700V
3.2A
13W
2
60A
sec
5A
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NTE5513 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are in- tended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability 600V and a forward current rating of 5A (rms value case temperature of +75 C ...
Page 2
... NTE5513 Peak Blocking Forward Current NTE5511 NTE5512 NTE5513 Peak Blocking Reverse Current NTE5511 NTE5512 NTE5513 Forward Voltage Drop DC Gate–Trigger Current DC Gate–Trigger Voltage Holding Current Critical Rate of Applied Forward Voltage Turn–On Time (Delay Time + Rise Time) Turn–Off Time ...