NTE5516 NTE ELECTRONICS, NTE5516 Datasheet
NTE5516
Manufacturer Part Number
NTE5516
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),20A I(T),TO-203AA
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5514.pdf
(2 pages)
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (T
Repetitive Peak Reverse Voltage (T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), I
Peak Gate−Trigger Current (3μs Max), I
Peak Gate−Power Dissipation (I
Average Gate−Power Dissipation, P
Operating Temperatue Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Peak Off−State Current
Maximum On−State Voltage (Peak)
Peak On−State Current
DC Holding Current
DC Gate−Trigger Current
DC Gate−Trigger Voltage
Gate Controlled Turn−On Time
Critical Rate−of−Rise of
Off−State Voltage
NTE5514
NTE5515
NTE5516
NTE5514
NTE5515
NTE5516
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
= +75°C), I
stg
Symbol
Critical
GT
opr
I
I
dv/dt
NTE5514 thru NTE5516
DRM
V
V
RRM
20 Amp, 1/2” Press Fit
I
I
t
TM
I
GT
TM
GT
gt
H
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ I
J
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
,
J
= +100°C), V
GTM
= +100°C), V
T(RMS)
T
V
T
T
Anode Voltage = 12V, R
Anode Voltage = 12V, R
t
T
GTM
d
J
C
C
C
DRM
+ t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100°C, Gate Open,
= +25°C
= +25°C, Gate Open
= +100°C, Gate Open
for 3μs Max), P
r
, I
and V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150mA
RRM
thJC
Test Conditions
RRM
DRM
= Max. Rating
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
L
L
= 30Ω, T
= 30Ω, T
. . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
= +25°C
= +25°C
Min
TSM
−
−
−
−
−
−
−
−
. . . . . . . . .
Typ
−40° to +150°C
−40° to +100°C
100
2.5
−
−
−
−
−
−
Max Unit
2.0
1.9
2.0
40
50
25
−
−
1.3°C/W
200V
400V
600V
200V
400V
600V
200A
0.5W
V/μs
20W
mA
mA
mA
μs
20A
20A
V
A
V
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NTE5516 Summary of contents
Page 1
... Maximum On−State Voltage (Peak) Peak On−State Current DC Holding Current DC Gate−Trigger Current DC Gate−Trigger Voltage Gate Controlled Turn−On Time Critical Rate−of−Rise of Off−State Voltage NTE5514 thru NTE5516 20 Amp, 1/2” Press Fit = +100°C DRM = +100°C RRM = +75° ...
Page 2
Max Gate .063 (1.6) .380 (9.65) Max .475 (12.09) Max .505 (12.85) Max Cathode .085 (2.15) .767 (19.5) Max Anode ...