NTE5551 NTE ELECTRONICS, NTE5551 Datasheet
NTE5551
Manufacturer Part Number
NTE5551
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),668A I(T),TO-200var58W
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5551.pdf
(2 pages)
Specifications of NTE5551
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave), I
RMS On−State Current (T
Continuous On−State Current (T
Peak One−Cycle Surge (10ms duration, 60% V
Non−Repetitive On−State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100s pulse width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of On−State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Heatsink, R
NTE5551
NTE5553
NTE5551
NTE5553
T
T
10ms duration
3ms duration
(Gate drive 20V, 20 with t
(For a device with a maximum forward voltage drop characteristic)
hs
hs
Repetitive
Non−Repetitive
Double Side Cooled
Single Side Cooled
= +55C (Double Side Cooled)
= +85C (Single Side Cooled)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Silicon Controlled Rectifier (SCR)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
= +25C, Double Side Cooled), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
hs
hs
J
r
NTE5551 & NTE5553
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1s, anode voltage 80% V
750 Amp, TO200AB
= +25C, Double Side Cooled), I
= +125C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
R
GM
DSM
10V), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
th(j−hs)
T(AV)
RRM
gate open−circuit), dv/dt
2
RSM
t
re−applied), I
R
10V), I
T(RMS)
TSM (2)
TSM (1)
DRM
T
. . . . . . . . . . . . . . . . . . . . .
)
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
FGM
FGM
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
−40 to +125C
−40 to +150C
131000A
0.095C/W
0.190C/W
97350A
1000A/s
200V/s
500A/s
1600V
1700V
4650A
5120A
100W
600V
700V
390A
160A
780A
668A
19A
18V
2W
5V
2
2
s
s
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NTE5551 Summary of contents
Page 1
... Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction−to−Heatsink, R (For a device with a maximum forward voltage drop characteristic) Double Side Cooled Single Side Cooled NTE5551 & NTE5553 750 Amp, TO200AB = +125C unless otherwise specified RRM ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Peak On−State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off−State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage ...