NTE5555 NTE ELECTRONICS, NTE5555 Datasheet
NTE5555
Manufacturer Part Number
NTE5555
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),290A I(T),TO-200var42
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5555.pdf
(2 pages)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non–Repetitive Peak Reverse Blocking Voltage, V
Average On–State Current (Half Sine Wave), I
RMS On–State Current (T
Continuous On–State Current (T
Peak One–Cycle Surge (10ms duration, 60% V
Non–Repetitive On–State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100 s pulse width), P
Rate of Rise of Off–State Voltage (To 80% V
Rate of Rise of On–State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Heatsink, R
NTE5555
NTE5557
NTE5555
NTE5557
T
T
10ms duration
3ms duration
(Gate drive 20V, 20
(For a device with a maximum forward voltage drop characteristic)
hs
hs
Repetitive
Non–Repetitive
Double Side Cooled
Single Side Cooled
= +55 C (Double Side Cooled)
= +85 C (Single Side Cooled)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Silicon Controlled Rectifier (SCR)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
with t
= +25 C, Double Side Cooled), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
hs
hs
J
r
NTE5555 & NTE5557
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, Double Side Cooled), I
= +125 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 s, anode voltage
, V
R
GM
DSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
820 Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V), I
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
th(j–hs)
T(AV)
RRM
gate open–circuit), dv/dt
2
RSM
t
re–applied), I
R
10V), I
80% V
T(RMS)
TSM (2)
TSM (1)
DRM
T
. . . . . . . . . . . . . . . . . . . .
)
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
FGM
FGM
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
–40 to +125 C
–40 to +150 C
349000A
256000A
0.05 C/W
1000A/ s
0.1 C/W
200V/ s
500A/ s
1600V
1700V
1470A
1230A
7600A
8360A
100W
600V
700V
735A
290A
20A
18V
2W
5V
2
2
s
s
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NTE5555 Summary of contents
Page 1
... Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction–to–Heatsink, R (For a device with a maximum forward voltage drop characteristic) Double Side Cooled Single Side Cooled NTE5555 & NTE5557 820 Amp = +125 C unless otherwise specified RRM ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Peak On–State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off–State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage ...