NTE5595 NTE ELECTRONICS, NTE5595 Datasheet
NTE5595
Manufacturer Part Number
NTE5595
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),850A I(T),TO-200var58
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5561.pdf
(2 pages)
Specifications of NTE5595
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ratings: (Maximum Values at T
Repetitive Peak Voltage, V
Repetitive Peak Reverse Voltage, V
Non-Repetitive Peak Off-State Voltage, V
Non-Repetitive Peak Reverse Blocking Voltage, V
Average On-State Current (Half Sine Wave), I
RMS On-State Current (+25°C Heatsink Temperature, Double Side Cooled), I
Continuous On-State Current (+25°C Heatsink Temperature, Double Side Cooled), I
Peak One Cycle Surge (Non-Repetitive) On-State Current (10ms Duration), I
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode Positive with respect to Cathode), I
Peak Forward Gate Voltage (Anode Positive with respect to Cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100μs Pulse Width), P
Rate of Rise of Off-State Voltage (To 80% V
Rate of Rise of Off-State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
NTE5561
NTE5594
NTE5595
NTE5596
NTE5561
NTE5594
NTE5595
NTE5596
NTE5561
NTE5594
NTE5595
NTE5596
NTE5561
NTE5594
NTE5595
NTE5596
+55°C Heatsink Temperature, Double Side Cooled
+85°C Heatsink Temperature, Single Side Cooled
60% V
V
10ms Duration
3ms Duration
(Gate Drive 20V, 20Ω with t
R
≤ 10V
Repetitive
Non-Repetitive
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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re-applied
Silicon Controlled Rectifier (SCR), 850A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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G
NTE5561, NTE5594 thru NTE5596
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
hs
J
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
= +125°C unless otherwise specified)
≤ 1μs, Anode Voltage ≤ 80% V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
≤ 10V), I
GM
DSM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(AV)
Gate Open-Circuit), dv/dt
2
RSM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
)
FGM
FGM
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
. . . . . . . . . . .
TSM
T(RMS)
-40° to +125°C
-40° to +150°C
T
8000000A
5900000A
. . . . .
. . . .
1000A/μs
200V/μs
500A/μs
12650A
11500A
1600V
1200V
1600V
1200V
1600V
1200V
1700V
1200V
1640A
1400A
120W
200V
600V
200V
600V
200V
600V
300V
700V
820A
320A
20A
22V
4W
5V
2
2
s
s
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NTE5595 Summary of contents
Page 1
... NTE5595 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Peak On-State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off-State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current Required to Fire All Devices (T Maximum Gate Voltage Required ...