2N5684 NTE ELECTRONICS, 2N5684 Datasheet

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2N5684

Manufacturer Part Number
2N5684
Description
T-PNP SI- HI PO AMP SW
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of 2N5684

Rohs Compliant
YES

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
2N5684
Manufacturer:
IDT
Quantity:
12
Part Number:
2N5684G
Manufacturer:
ON
Quantity:
466
Part Number:
2N5684G
Manufacturer:
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Quantity:
95
2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
switching circuit applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Range
Thermal Resistance, Junction-to-Case
These packages are designed for use in high-power amplifier and
High Current Capability - I
DC Current Gain - h
Low Collector-Emitter Saturation Voltage -
Pb-Free Packages are Available*
V
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
CE(sat)
300
250
200
150
100
50
0
Characteristic
0
= 1.0 Vdc (Max) @ I
Rating
20
40
(Note 1)
FE
Figure 1. Power Derating
C
= 15-60 @ I
60
= 25°C
TEMPERATURE (°C)
C
80
Continuous = 50 Amperes
C
100
= 25 Adc
Symbol
Symbol
T
V
J
C
V
V
qJC
P
, T
CEO
I
I
CB
EB
C
B
= 25 Adc
D
120 140
stg
- 65 to + 200
Value
1.715
0.584
Max
300
5.0
160
80
80
50
15
180
1
mW/°C
200
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
mW
°C
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2N5684G
2N5686
2N5686G
COMPLEMENTARY SILICON
60-80 VOLTS, 300 WATTS
Device
POWER TRANSISTORS
2N568x
G
A
YY
WW
MEX
ORDERING INFORMATION
http://onsemi.com
50 AMPERE
TO-204 (TO-3)
CASE 197A
(Pb-Free)
(Pb-Free)
Package
= Device Code
= Pb-Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
STYLE 1
TO-3
TO-3
TO-3
x = 4 or 6
Publication Order Number:
100 Units/Tray
100 Units/Tray
100 Units/Tray
MARKING
DIAGRAM
2N568xG
Shipping
AYYWW
MEX
2N5684/D

Related parts for 2N5684

2N5684 Summary of contents

Page 1

... High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - I Continuous = 50 Amperes C • DC Current Gain - h = 15- • Low Collector-Emitter Saturation Voltage - V = 1.0 Vdc (Max Adc ...

Page 2

... DUTY CYCLE ≈ 2.0% + -12 V ≤ 100 μs DUTY CYCLE ≈ 2.0% FOR CURVES OF FIGURES 3 & INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit 2N5684 (PNP), 2N5686 (NPN 25_C unless otherwise noted) (Note 0.2 Adc Vdc Vdc ...

Page 3

... I , COLLECTOR CURRENT (AMP) C Figure 6. Turn-Off Time 2N5684 (PNP), 2N5686 (NPN) θ (t) = r(t) θ JC θ = 0.584°C/W MAX JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) C 1.0 2.0 5 ...

Page 4

... J 2.0 1 1.0 BE(sat 2 0 CE(sat 0.5 0.7 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (AMP) C 2N5684 (PNP), 2N5686 (NPN) NPN 2N5686 500 V = 2.0 V 300 200 CE + 25°C 100 55° 7.0 5 0.5 0.7 1.0 Figure 8. DC Current Gain 2 25° 1.2 ...

Page 5

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 61312, Phoenix, Arizona 85082-1312 USA  Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada  Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com 2N5684 (PNP), 2N5686 (NPN) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 197A-05 ISSUE K SEATING -T- ...

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