NTE5650 NTE ELECTRONICS, NTE5650 Datasheet

NTE5650

Manufacturer Part Number

NTE5650

Description

TRIAC,100V V(DRM),2.5A I(T)RMS,TO-5

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE5650.pdf (2 pages)

Specifications of NTE5650

Rohs Compliant

YES

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Description:

The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and

MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed

in TO–5 outline cans.

The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–

state to conduction for either polarity of applied voltage with positive or negative gate–trigger current

and are designed for control applications in lighting, heating, cooling and static switching relays.

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage (T

RMS On–State Current (T

Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), I

Peak Gate–Trigger Current (3 sec, Max.), I

Peak Gate–Power Dissipation (I

Average Gate–Power Dissipation, P

Operating Temperature Range (T

Storage Temperature Range, T

Typical Thermal Resistance, Junction–to–Case, R

Note 1. All values apply in either direction.

Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)

Note 1. All values apply in either direction.

Peak Off–State Current

Maximum On–State Voltage

DC Holding Current

Critical Rate–of–Rise of Off–State

DC Gate–Trigger Current

Voltage

NTE5650

NTE5651

NTE5652

NTE5653

(+) Gate (–), MT

(+) Gate (+), MT

Parameter

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(–) Gate (+)

(–) Gate (–)

= +75 C and Conduction Angle of 360 ), I

stg

NTE5650 thru NTE5653

TRIAC – 100V

), T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Symbol

Critical

G(AV)

DROM

dv/dt

GTM

opr

= +90 C, Gate Open, Note 1), V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

for 3 sec. Max.), P

Gate Open, Note 1

Note 1

GTM

= +90 C, V

= +25 C, i

= +25 C, Gate Open

= +90 C, v

= + 25 C, v

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

Test Conditions

DROM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 5A (Peak), Note 1

= V

, 2.5A

= 6V, R

DROM

= Max Rating,

, Gate Open,

= 39

. . . . . . . . . . . . . . . . . . . . . . . .

T(RMS)

DROM

Min

. . . . . . . . . . . . . . .

–

TSM

Typ

–40 to +150 C

–

–40 to +90 C

. . . . . . . .

Max Unit

0.75

1.85

–

4 C/W

100V

200V

400V

600V

0.2W

V/ s

20W

30A

Related parts for NTE5650

NTE5650 Summary of contents

Page 1

... Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off– ...

Page 2

Electrical Characteristics (Cont’d): (At Maximum Ratings & Specified Case Temperature) Parameter DC Gate Trigger Voltage Gate–Controlled Turn–On Time Fusing Current (For TRIAC Protection) Symbol Test Conditions + 6V ...

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