6MBI75S-120-50 FUJI ELECTRIC, 6MBI75S-120-50 Datasheet - Page 12

• Manufacturer Part Number: 6MBI75S-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 520W
• Rohs Compliant: Yes

0.01
200
150
100
0.1
50
0.001
0
1
0
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VF [ V ]
Transient thermal resistance
1
Pulse width : Pw [ sec ]
0.01
2
Tj=125℃
0.1
3
Tj=25℃
IGBT
FWD
4
1
300
100
10
0
MS5F 6104
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=± 15V, Rg=16Ω
Forward current : IF [ A ]
50
100
trr(125℃ )
Irr(125℃ )
Irr(25℃ )
trr(25℃ )
H04- 004- 03a
12
14
150
a