16TTS12FPPBF Vishay, 16TTS12FPPBF Datasheet - Page 3

• Manufacturer Part Number: 16TTS12FPPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-220AB
• Manufacturer: Vishay

Specifications of 16TTS12FPPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
Revision: 26-May-08
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
maximum
minimum
For technical questions, contact: [e-mail]
TO-220AB FULL-PAK, 16 A
SYMBOL
T
R
R
R
Phase Control SCR
J
, T
thCS
thJC
thJA
Stg
DC operation
Mounting surface, smooth and greased
Case style TO-220AB FULL-PAK (94/V0)
16TTS..FPPbF High Voltage Series
TEST CONDITIONS
Vishay High Power Products
- 40 to 125
VALUES
12 (10)
6 (5)
0.07
1.5
1.5
62
2
16TTS08FP
16TTS12FP
www.vishay.com
kgf · cm
(lbf · in)
UNITS
°C/W
oz.
°C
g
3