CM75MXA-24S Powerex Inc, CM75MXA-24S Datasheet - Page 2

• Manufacturer Part Number: CM75MXA-24S
• Description: IGBT MODULE NX-SERIES CIB DP 1200 75
• Manufacturer: Powerex Inc
• Type: CIB Moduler

Specifications of CM75MXA-24S

• Voltage: 1200V
• Current: 75A
• Circuit Configuration: CIB Module
• Rohs Compliant: Yes
• Recommended Gate Driver: M57159L
• Recommended Dc To Dc Converter: VLA106-15242

2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Absolute Maximum Ratings, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V
Gate-Emitter Voltage (V
Collector Current (DC, T
Collector Current (Pulse, Repetitive)
Total Power Dissipation (T
Emitter Current (T
Emitter Current (Pulse, Repetitive)
Maximum Junction Temperature
Brake Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V
Gate-Emitter Voltage (V
Collector Current (DC, T
Collector Current (Pulse, Repetitive)
Total Power Dissipation (T
Repetitive Peak Reverse Voltage (V
Forward Current (T
Forward Current (Pulse, Repetitive)
Maximum Junction Temperature
Converter Part ConvDi
Characteristics
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current (3-phase Full Wave Rectifying, T
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60 Hz, Non-repetitive)
Current Square Time (Value for One Cycle of Surge Current)
Maximum Junction Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*3 Junction temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (T
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
temperature (T
does not exceed T
j(max)
j(max)
C
C
) rating.
C
) and heatsink temperature (T
= 25°C)
j
) should not increase beyond maximum junction
= 25°C)
rating.
CE
CE
C
C
C
C
= 122°C)
= 125°C)
= 0V)
= 0V)
GE
GE
*2,*3
= 25°C)
= 25°C)
*2,*3
= 0V)
= 0V)
*4
*2,*3
*2,*3
*4
GE
*4
*4
*2,*3
*2,*3
= 0V)
j
= 25°C unless otherwise specified
s
) is measured on the surface
C
= 125°C)
*2,*3
j
)
15.2
18.1
32.6
48.0
31.2
47.0
0
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
Symbol
T
Symbol
T
Symbol
T
I
I
V
V
V
V
ERM
V
V
I
I
FRM
I
j(max)
j(max)
j(max)
54
55
56
57
58
59
60
61
CRM
CRM
P
I
P
I
FSM
RRM
RRM
CES
GES
CES
GES
E
I
E
I
F
I
I
2
C
tot
C
tot
O
*1
*1
a
t
*1
Br
*1
Tr
53
1
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
CR
RP
CR
RN
2
3
Di
Br
4 5
CR
SN
CR
SP
6
CR
CR
7
TN
TP
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
UP
Tr
UN
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
UN
Di
Tr
UP
Di
Rating
Rating
Rating
1200
1200
1200
1200
2340
±20
150
600
150
175
±20
100
425
100
175
440
750
150
VP
VN
75
75
50
50
75
VN
Tr
Di
Tr
VP
Di
WN
Di
WP
Tr
WN
Tr
WP
Di
Th
LABEL SIDE
30
29
28
27
26
25
24
23
0
17.2
19.4
24.6
25.6
35.9
42.5
46.2
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
05/11 Rev. 2
V
Watts
Watts
Volts
Volts
Volts
Volts
Units
Volts
Units
Volts
Units
A
RMS
°C
°C
°C
2
s