CM75MXA-24S Powerex Inc, CM75MXA-24S Datasheet - Page 3

• Manufacturer Part Number: CM75MXA-24S
• Description: IGBT MODULE NX-SERIES CIB DP 1200 75
• Manufacturer: Powerex Inc
• Type: CIB Moduler

Specifications of CM75MXA-24S

• Voltage: 1200V
• Current: 75A
• Circuit Configuration: CIB Module
• Rohs Compliant: Yes
• Recommended Gate Driver: M57159L
• Recommended Dc To Dc Converter: VLA106-15242

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
05/11 Rev. 2
Absolute Maximum Ratings, T
Module
Characteristics
Maximum Case Temperature
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
*3 Junction temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
) should not increase beyond maximum junction temperature (T
*2
j
= 25°C unless otherwise specified
j
= 25°C unless otherwise specified
s
) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
(Terminal)
(Terminal)
R
V
V
V
CC' + EE'
Symbol
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
Q
GE(th)
C
C
d(on)
d(off)
GES
t
CES
Q
EC
EC
rr
oes
r
t
t
rr
ies
res
g
G
r
f
*1
*1
*1
*1
V
V
V
CC
I
I
CC
j
E
E
CC
) does not exceed T
I
I
I
I
C
C
C
C
I
I
I
I
I
E
= 75A, V
I
E
= 75A, V
C
C
R
R
E
E
= 600V, I
= 600V, I
= 75A, V
= 75A, V
= 75A, V
= 75A, V
= 600V, I
Per Switch, T
G
= 75A, V
= 75A, V
G
= 75A, V
= 75A, V
j(max)
= 75A, V
= 75A, V
V
Main Terminals-Chip,
V
V
I
CE
= 8.2Ω, Inductive Load
= 8.2Ω, Inductive Load
C
CE
GE
) rating.
= 7.5mA, V
Test Conditions
= 10V, V
Per Switch
GE
GE
= V
= V
C
GE
GE
GE
GE
E
C
GE
GE
GE
GE
GE
GE
= 75A, V
= 0V, T
= 0V, T
= 75A, V
CES
GES
= 75A, V
j(max)
= 15V, T
= 15V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
C
GE
, V
, V
= 25°C
CE
rating.
GE
CE
j
j
= 0V
= 150°C
= 150°C
GE
GE
= 10V
GE
j
j
j
j
j
j
j
j
= 125°C
= 125°C
= 0V
= 0V
j
j
= 125°C
= 150°C
= 125°C
= 150°C
= 25°C
= 25°C
T
Symbol
= 25°C
= 25°C
= ±15V,
= ±15V
*2
T
C(max)
V
= 15V
T
j(op)
ISO
stg
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
Min.
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-40 to +150
-40 to +125
Rating
2500
125
2.00
2.05
1.80
1.70
1.90
1.95
1.80
1.80
1.80
1.70
1.70
1.70
175
Typ.
6.0
4.0
—
—
—
—
—
—
—
—
—
—
—
0
Max.
2.25
2.15
0.13
2.25
2.15
300
200
600
300
300
0.5
6.6
4.0
7.5
1.5
—
—
—
—
—
—
—
—
—
—
—
1
Units
Volts
°C
°C
°C
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mΩ
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns
Ω
3