SI1905DL-T1 Vishay, SI1905DL-T1 Datasheet

DUAL P CHANNEL MOSFET, -8V, SC-70

SI1905DL-T1

Manufacturer Part Number
SI1905DL-T1
Description
DUAL P CHANNEL MOSFET, -8V, SC-70
Manufacturer
Vishay
Datasheet

Specifications of SI1905DL-T1

Transistor Polarity
P Channel
Continuous Drain Current Id
570mA
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1905DL-T1
Manufacturer:
VISHAY
Quantity:
37 000
Part Number:
SI1905DL-T1
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SI1905DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
72 605
Part Number:
SI1905DL-T1-E3
Quantity:
6 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71082
S10-0792-Rev. C, 05-Apr-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 8
(V)
0.600 at V
0.850 at V
1.200 at V
R
DS(on)
J
a
= 150 °C)
GS
GS
GS
a
Dual P-Channel 1.8 V (G-S) MOSFET
G
D
= - 4.5 V
= - 2.5 V
= - 1.8 V
S
Ordering Information: Si1905DL-T1-E3 (Lead (Pb)-free)
(Ω)
1
1
2
1
2
3
a
SC-70 (6-LEADS)
SOT-363
Top View
a
A
± 0.60
± 0.50
± 0.42
I
Si1905DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 25 °C, unless otherwise noted
D
(A)
Steady State
Steady State
6
5
4
t ≤ 5 s
D
G
S
1
2
2
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
Definition
Symbol
Marking Code
R
R
thJA
thJF
QB XX
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
Part # Code
stg
®
Power MOSFETs
Lot Traceability
and Date Code
Typical
360
400
300
± 0.60
± 0.43
- 0.25
0.30
0.16
5 s
- 55 to 150
± 1.0
Maximum
± 8
- 8
415
460
350
Vishay Siliconix
Steady State
± 0.57
± 0.41
- 0.23
0.27
0.14
Si1905DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1905DL-T1

SI1905DL-T1 Summary of contents

Page 1

... TrenchFET ± 0.50 • 1.8 V Rated ± 0.42 • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS Marking Code Top View Si1905DL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted ° ° ° °C A Symbol t ≤ thJA Steady State ...

Page 2

... Si1905DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71082 S10-0792-Rev. C, 05-Apr- 0.6 0.8 1.0 1.0 1.2 1.4 1 °C J 0.8 1.0 1 Si1905DL Vishay Siliconix 160 C iss 120 80 C oss 40 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (°C) J On-Resistance vs ...

Page 4

... Si1905DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 I 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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