SI1905DL-T1 Vishay, SI1905DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1905DL-T1
• Description: DUAL P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905DL-T1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 570mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71082
S10-0792-Rev. C, 05-Apr-10
0.1
2.0
1.5
1.0
0.5
5
4
3
2
1
0
1
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 0.57 A
0.2
= 4 V
On-Resistance vs. Drain Current
0.2
V
0.4
SD
Q
g
-
V
0.4
- Total Gate Charge (nC)
I
T
S
D
GS
Gate Charge
J
o
0.6
- Drain Current (A)
u
= 150 °C
0.4
c r
= 1.8 V
e
t -
- o
0.8
0.6
V
D
GS
a r
n i
= 2.5 V
0.6
1.0
V
l o
0.8
a t
g
V
1.2
e
GS
T
(
J
) V
0.8
= 4.5 V
= 25 °C
1.0
1.4
1.6
1.2
1.0
160
120
2.0
1.5
1.0
0.5
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 0.57 A
= 4.5 V
1
V
V
GS
DS
T
2
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
oss
25
Capacitance
C
2
iss
50
4
Vishay Siliconix
3
75
Si1905DL
I
D
www.vishay.com
100
= 0.57 A
6
4
125
150
8
5
3