SI1905DL-T1 Vishay, SI1905DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1905DL-T1
• Description: DUAL P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905DL-T1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 570mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Si1905DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71082.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Single Pulse
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
50
40
30
20
10
1
0
-1
10
-3
10
-2
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
10
P
DM
-1
JM
Time (s)
- T
t
A
1
1
S10-0792-Rev. C, 05-Apr-10
= P
t
2
1
Document Number: 71082
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 400 °C/W
100
6
0
1
0
0
600