SUD50N02-04P-E3 Vishay

SUD50N02-04P-E3

Manufacturer Part Number

SUD50N02-04P-E3

Description

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,34A I(D),TO-252

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SUD50N02-04P-E3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.3 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

34A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 4.5V

Input Capacitance (ciss) @ Vds

5000pF @ 10V

Power - Max

8.3W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0043 Ohms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

8.3 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SUD50N02-04P-E3TR

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Related keywords

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