SUD50N02-06P-T1-E3 Vishay, SUD50N02-06P-T1-E3 Datasheet

N CHANNEL MOSFET, 20V, 30A, TO-252

SUD50N02-06P-T1-E3

Manufacturer Part Number
SUD50N02-06P-T1-E3
Description
N CHANNEL MOSFET, 20V, 30A, TO-252
Manufacturer
Vishay
Datasheet

Specifications of SUD50N02-06P-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
9.5mohm
Rds(on) Test Voltage Vgs
4.5V
Power Dissipation Pd
65W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
a.
b.
Document Number: 71931
S-32425—Rev. C, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Ordering Information: SUD50N02-06P
V
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
DS
20
20
(V)
G
Top View
TO-252
D
S
a
a
0.0095 @ V
0.006 @ V
a
a
Drain Connected to Tab
r
DS(on)
N-Channel 20-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 10 V
= 4.5 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
26
21
(A)
Steady State
L = 0 1 mH
L = 0.1 mH
T
t v 10 sec
T
T
T
A
A
C
C
a
= 25_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
APPLICATIONS
D Synchronous Buck DC/DC Conversion
stg
− Desktop
− Server
g
Typical
Tested
1.9
18
40
−55 to 175
Limit
SUD50N02-06P
"20
6.8
100
101
26
50
20
26
45
65
Vishay Siliconix
a
b
a
Maximum
2.3
22
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
1

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SUD50N02-06P-T1-E3 Summary of contents

Page 1

... 0.0095 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N02-06P ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... SUD50N02-06P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T − Junction Temperature (_C) J Document Number: 71931 S-32425—Rev. C, 24-Nov-03 0.010 0.008 25_C 125_C 0.006 0.004 0.002 0.000 100 100 125 150 175 SUD50N02-06P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N02-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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