SUD50N02-06P Vishay Siliconix, SUD50N02-06P Datasheet

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SUD50N02-06P

Manufacturer Part Number
SUD50N02-06P
Description
P-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70104
08-Jun-04
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
N-Channel 20-V (D-S) 175° MOSFET
The subcircuit
SPICE Device Model SUD50N02-06P
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
Characteristics
gd
model. All model parameter values
Vishay Siliconix
www.vishay.com
1

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SUD50N02-06P Summary of contents

Page 1

... Document Number: 70104 08-Jun-04 SPICE Device Model SUD50N02-06P • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... SPICE Device Model SUD50N02-06P Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage b On-State Drain Current b Drain-Source On-State Resistance b Forward Voltage a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Turn-On Delay Time ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 70104 08-Jun-04 SPICE Device Model SUD50N02-06P =25°C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...

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