SUD50N02-06 Vishay/Siliconix, SUD50N02-06 Datasheet
SUD50N02-06
Specifications of SUD50N02-06
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SUD50N02-06 Summary of contents
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... UNLESS OTHERWISE NOTED) A Symbol T = 25_C 100_C 25_C 25_C A T Symbol sec. R Steady State R SUD50N02-06 Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% R Tested g Limit " 100 ...
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... SUD50N02-06 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 1 0.0 0.010 25_C 0.008 125_C 0.006 0.004 0.002 0.000 80 100 SUD50N02-06 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...
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... SUD50N02-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 4 1.6 1.2 0.8 0.4 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 100 T - Case Temperature (_C) A Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...