SI4804CDY-T1-E3 Vishay, SI4804CDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4804CDY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4804CDY-T1-E3

• Input Capacitance (ciss) @ Vds: *
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
0.026
0.024
0.022
0.020
0.018
0.016
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0.0
0
I
D
= 7.5 A
On-Resistance vs. Drain Current
0.5
3.2
6
V
DS
Output Characteristics
V
Q
DS
- Drain-to-Source Voltage (V)
g
V
V
I
D
GS
- Total Gate Charge (nC)
GS
= 10 V
V
Gate Charge
- Drain Current (A)
GS
1.0
12
6.4
= 10 V
= 4.5 V
= 10 thru 4 V
V
DS
1.5
18
9.6
= 20 V
V
V
GS
DS
12.8
2.0
24
= 3 V
= 15 V
New Product
16.0
2.5
30
1100
880
660
440
220
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 7.5 A
C
C
- 25
rss
iss
oss
T
T
C
C
V
1
6
= 125 °C
T
Transfer Characteristics
V
GS
= 25 °C
J
DS
T
0
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= - 55 °C
Capacitance
25
12
2
V
50
Vishay Siliconix
GS
= 10 V
Si4804CDY
18
3
75
V
www.vishay.com
GS
100
= 4.5 V
24
4
125
150
30
5
3