SI4804CDY-T1-E3 Vishay, SI4804CDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4804CDY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4804CDY-T1-E3

• Input Capacitance (ciss) @ Vds: *
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
4.0
3.2
2.4
1.6
0.8
0.0
0
25
D
T
Power, Junction-to-Foot
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
10
8
6
4
2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
T
150
C
- Case Temperature (°C)
50
Current Derating*
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4804CDY
100
www.vishay.com
125
150
5