SI4804CDY-T1-E3 Vishay, SI4804CDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4804CDY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4804CDY-T1-E3

• Input Capacitance (ciss) @ Vds: *
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 3.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4804CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
0.4
0.2
0.0
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
T
Threshold Voltage
= 150 °C
J
0.4
- Temperature (°C)
25
I
D
50
= 250 µA
0.6
0.01
100
75
0.1
10
1
0.8
0.01
I
D
T
100
= 5 mA
J
Limited by R
* V
= 25 °C
GS
1.0
125
> minimum V
Single Pulse
V
0.1
T
DS
A
New Product
= 25 °C
150
DS(on)
- Drain-to-Source Voltage (V)
1.2
Safe Operating Area
*
GS
at which R
1
DS(on)
BVDSS
10
0.10
0.08
0.06
0.04
0.02
0.00
is specified
50
40
30
20
10
0
0
0 .
0
On-Resistance vs. Gate-to-Source Voltage
0
10 ms
100 ms
1 s
10 s
1 ms
1
DC
Single Pulse Power, Junction-to-Ambient
1
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-82485-Rev. A, 13-Oct-08
Document Number: 68924
T
J
T
6
= 125 °C
J
= 25 °C
7
1
8
9
10
1
0