BPW96B Vishay, BPW96B Datasheet - Page 4

• Manufacturer Part Number: BPW96B
• Description: Photodetector Transistors NPN Phototransistor 70V 150mW 850nm
• Manufacturer: Vishay
• Type: Chipr

Specifications of BPW96B

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 200 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 150mW
• Viewing Angle: 20°
• No. Of Pins: 2
• Light Current: 4.5mA
• Dark Current: 200nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Clear
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 200nA
• Power Dissipation: 150mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 40deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPW96B, BPW96C
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
422
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
94 8348
1.0
0.8
0.6
0.4
0.2
0
400
Drawing-No.: 6.544-5086.01-4
Issue:1; 01.07.96
96 12192
600
λ - Wavelength (nm)
1
+ 0.2
- 0.1
For technical questions, contact: [e-mail]
800
C
Silicon NPN Phototransistor, RoHS Compliant
1000
Ø 5
2.54 nom.
0.8
0.63
E
± 0.15
+ 0.2
- 0.1
+ 0.2
- 0.1
Chip position
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
94 8299
1.0
0.9
0.8
0.7
0.5
0.6
Area not plane
+ 0.15
0.4
0.2
technical drawings
according to DIN
specifications
0°
0
10°
Document Number: 81532
20°
Rev. 1.7, 05-Sep-08
30°
40°
50°
60°
70°
80°