BPW96B Vishay, BPW96B Datasheet - Page 5

Photodetector Transistors NPN Phototransistor 70V 150mW 850nm

BPW96B

Manufacturer Part Number
BPW96B
Description
Photodetector Transistors NPN Phototransistor 70V 150mW 850nm
Manufacturer
Vishay
Type
Chipr
Datasheet

Specifications of BPW96B

Maximum Power Dissipation
150 mW
Maximum Dark Current
200 nA
Collector- Emitter Voltage Vceo Max
70 V
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
150mW
Viewing Angle
20°
No. Of Pins
2
Light Current
4.5mA
Dark Current
200nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Clear
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
200nA
Power Dissipation
150mW
Peak Wavelength
850nm
Half-intensity Angle
40deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Document Number: 91000
www.vishay.com
Revision: 11-Mar-11
1

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