BPX 84 OSRAM Opto Semiconductors Inc, BPX 84 Datasheet - Page 6

• Manufacturer Part Number: BPX 84
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Arrayr

Specifications of BPX 84

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Multiple Digit Array
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 3
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 320uA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 6
• Package Type: Multiple-digit Array
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0030

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
.
2007-04-04
Transistoren pro Zeile
Number of Transistors per Array
2
3
4
5
6
7
8
9
10
7.4 (0.291)
7.0 (0.276)
2.54 (0.100)
spacing
0.5 (0.020)
0.4 (0.016)
Collector (BPX 83)
Cathode (LD 263)
Maße „A“
Dimensions “A”
4.5 ... 4.9
7.0 ... 7.4
9.6 ... 10.0
12.1 ... 12.5
14.6 ... 16.0
17.2 ... 17.6
19.7 ... 20.1
22.3 ... 22.7
24.8 ... 25.2
1.4 (0.055)
1.0 (0.039)
0.7 (0.028)
0.6 (0.024)
A
0.4
6
Chip
position
0 ... 5˚
A
2.1 (0.083)
1.5 (0.059)
GEOY6367