SFH 309 FA-5/6 OSRAM Opto Semiconductors Inc, SFH 309 FA-5/6 Datasheet - Page 2

• Manufacturer Part Number: SFH 309 FA-5/6
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 309 FA-5/6

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 200 nA
• Fall Time: 8 us, 9 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us, 9 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 15mA
• Collector-emitter Sat Volt (max): 0.2V
• Dark Current (max): 200nA
• Light Current: 7200/11200uA
• Power Dissipation: 165mW
• Peak Wavelength: 900nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P5199

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2007-04-02
T
A
= 25 °C
Symbol
Symbol
T
V
I
I
P
R
C
CS
2
op
CE
tot
thJA
;
T
stg
Wert
Value
– 40 … + 100
35
15
75
165
450
SFH 309, SFH 309 FA
Einheit
Unit
°C
V
mA
mA
mW
K/W