SFH 309 FA-5/6 OSRAM Opto Semiconductors Inc, SFH 309 FA-5/6 Datasheet - Page 5

• Manufacturer Part Number: SFH 309 FA-5/6
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 309 FA-5/6

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 200 nA
• Fall Time: 8 us, 9 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us, 9 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 15mA
• Collector-emitter Sat Volt (max): 0.2V
• Dark Current (max): 200nA
• Light Current: 7200/11200uA
• Power Dissipation: 165mW
• Peak Wavelength: 900nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P5199

Relative Spectral Sensitivity,
SFH 309
Total Power Dissipation
P
Dark Current
I
2007-04-02
CEO
tot
Ι
S
CEO
rel
10
=
100
10
10
10
10
nA
=
80
60
40
20
%
-1
0
400
f
3
2
1
0
-25
f
(
T
(
T
A
S
A
)
rel
),
0
600
V
=
CE
f
25
(λ)
= 25 V,
800
50
1000
E = 0
75
λ
OHF01530
OHF01121
T
nm
˚C
A
1200
100
Relative Spectral Sensitivity,
SFH 309 FA
Photocurrent
I
Capacitance
C
PCE
CE
C
CE
=
=
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
pF
0
10
f
f
(
(
-2
V
V
CE
CE
),
),
10
S
-1
f
E
rel
= 1 MHz,
e
=
= Parameter
5
10
f
0
(λ)
10
E = 0
1
OHF01528
V
V
CE
10
2
Photocurrent
I
Dark Current
I
Photocurrent
I
PCE
CEO
PCE
Ι
Ι
PCE
Ι
PCE
CEO
/
SFH 309, SFH 309 FA
25
=
=
10
10
10
I
10
nA
10
PCE25°
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-1
-2
-3
f
f
0
1
0
-25
0
(
(
E
V
e
CE
5
),
=
),
0
V
f
10
E = 0
CE
(
T
25
A
= 5 V
15
),
V
20
50
CE
25
= 5 V
75
OHF01527
V
OHF01524
30
T
CE
A
C
V
100
35