SFH 309 FA-5/6 OSRAM Opto Semiconductors Inc, SFH 309 FA-5/6 Datasheet - Page 4

Photodetector Transistors PHOTOTRANSISTOR

SFH 309 FA-5/6

Manufacturer Part Number
SFH 309 FA-5/6
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
IR Chipr
Datasheet

Specifications of SFH 309 FA-5/6

Maximum Power Dissipation
165 mW
Maximum Dark Current
200 nA
Fall Time
8 us, 9 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
8 us, 9 us
Package / Case
T-1
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
35V
Collector Current (dc) (max)
15mA
Collector-emitter Sat Volt (max)
0.2V
Dark Current (max)
200nA
Light Current
7200/11200uA
Power Dissipation
165mW
Peak Wavelength
900nm
Half-intensity Angle
24deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P5199
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
SFH 309:
E
standard light A,
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
I
E
1)
1)
Directional Characteristics
2007-04-02
C
C
e
v
e
= 1 mA,
=
I
I
= 1000 Ix, Normlicht/
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
1)
V
CC
× 0.3,
= 5 V,
2
2
V
,
V
CE
CE
= 5 V
R
= 5 V
L
= 1 kΩ
S
rel
=
Symbol
Symbol
I
I
t
V
r
PCE
PCE
,
CEsat
f
t
(ϕ)
f
-2
0.4 …
0.8
1.5
5
200
4
-3
0.63 …
1.25
2.8
6
200
-4
1.0 …
2.0
4.5
7
200
Value
Wert
SFH 309, SFH 309 FA
-5
1.6 …
3.2
7.2
8
200
-6
2.5 …
5.0
11.2
9
200
Einheit
Unit
mA
mA
μs
mV

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