TCET1106G Vishay, TCET1106G Datasheet - Page 2

• Manufacturer Part Number: TCET1106G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 100-300%
• Manufacturer: Vishay

Specifications of TCET1106G

• Isolation Voltage: 5000 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Current Transfer Ratio: 300 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
G = lead form 10.16 mm; G is not marked on the body
Notes
(1)
(2)
Document Number: 83503
Rev. 2.3, 14-Oct-09
ORDER INFORMATION
PART
TCET1100
TCET1101
TCET1102
TCET1103
TCET1104
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1100G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
COUPLER
Isolation test voltage (RMS)
Operating ambient temperature range
Storage temperature range
Soldering temperature
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact:
Optocoupler, Phototransistor Output,
2 mm from case, ≤ 10 s
t
p
TEST CONDITION
/T = 0.5, t
(1)
t
t = 1 min
p
≤ 10 µs
High Temperature
p
≤ 10 ms
[e-mail]
SYMBOL
V
V
V
T
I
T
T
I
V
FSM
CEO
ECO
I
CM
amb
I
ISO
stg
sld
F
C
R
CTR 100 % to 200 %, DIP-4, 400 mil
CTR 160 % to 320 %, DIP-4, 400 mil
CTR 100 % to 300 %, DIP-4, 400 mil
CTR 130 % to 260 %, DIP-4, 400 mil
CTR 200 % to 400 %, DIP-4, 400 mil
CTR 50 % to 600 %, DIP-4, 400 mil
CTR 63 % to 125 %, DIP-4, 400 mil
CTR 50 % to 150 %, DIP-4, 400 mil
CTR 80 % to 160 %, DIP-4, 400 mil
CTR 40 % to 80 %, DIP-4, 400 mil
CTR 100 % to 200 %, DIP-4
CTR 160 % to 320 %, DIP-4
CTR 100 % to 300 %, DIP-4
CTR 130 % to 260 %, DIP-4
CTR 200 % to 400 %, DIP-4
TCET1100, TCET1100G
CTR 50 % to 600 %, DIP-4
CTR 63 % to 125 %, DIP-4
CTR 50 % to 150 %, DIP-4
CTR 80 % to 160 %, DIP-4
CTR 40 % to 80 %, DIP-4
Vishay Semiconductors
REMARKS
- 40 to + 100
- 55 to + 125
VALUE
5000
100
260
1.5
60
70
50
6
7
www.vishay.com
UNIT
V
mA
mA
mA
°C
°C
°C
RMS
V
A
V
V
811