TCET1106G Vishay, TCET1106G Datasheet - Page 4

• Manufacturer Part Number: TCET1106G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 100-300%
• Manufacturer: Vishay

Specifications of TCET1106G

• Isolation Voltage: 5000 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Current Transfer Ratio: 300 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Document Number: 83503
Rev. 2.3, 14-Oct-09
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
/I
F
V
V
V
TEST CONDITION
TEST CONDITION
CE
For technical questions, contact:
CE
CE
V
V
= 5 V, I
IO
IO
= 5 V, I
= 5 V, I
(construction test only)
t
Tr
Optocoupler, Phototransistor Output,
= 500 V, T
= 500 V, T
TEST CONDITION
100 %, t
= 60 s, t
(see figure 2)
V
F
F
F
IO
= 10 mA
= 1 mA
= 5 mA
= 500 V
test
test
amb
amb
= 1 s
= 10 s,
High Temperature
= 100 °C
= 150 °C
SYMBOL
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1100G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
V
TCET1101
TCET1102
TCET1103
TCET1104
TCET1100
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1101
TCET1102
TCET1103
TCET1104
P
IOTM
T
I
diss
PART
F
si
[e-mail]
SYMBOL
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
MIN.
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
10
10
10
1.6
1.3
6
12
11
9
TCET1100, TCET1100G
MIN.
100
130
200
100
160
13
22
34
56
50
50
80
40
63
TYP.
Vishay Semiconductors
TYP.
TYP.
30
45
70
90
MAX.
130
265
150
6
MAX.
MAX.
600
150
300
160
260
400
125
200
320
80
www.vishay.com
UNIT
mW
UNIT
mA
kV
°C
UNIT
kV
kV
kV
Ω
Ω
Ω
%
%
%
%
%
%
%
%
%
%
%
%
%
%
813