BDW64C Bourns Inc., BDW64C Datasheet

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BDW64C

Manufacturer Part Number
BDW64C
Description
Darlington Transistors 60W 6A PNP
Manufacturer
Bourns Inc.
Datasheet
1.BDW64.pdf (4 pages)

Specifications of BDW64C

Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
6 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
750, 100
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
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BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BDW64C.
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absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
●
●
●
●
R O D U C T
Designed for Complementary Use with
BDW63, BDW63A, BDW63B, BDW63C and
BDW63D
60 W at 25°C Case Temperature
6 A Continuous Collector Current
Minimum h
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
FE
E
S
of 750 at 3 V, 2 A
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0) (see Note 1)
CC
= -20 V.
RATING
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
C
E
B
Pin 2 is in electrical contact with the mounting base.
PNP SILICON POWER DARLINGTONS
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
P
P
CBO
CEO
EBO
T
I
I
T
C
stg
B
tot
tot
A
j
C
B(on)
2
3
1
2
= -5 mA, R
-65 to +150
-65 to +150
-65 to +150
VALUE
-100
-120
-100
-120
-0.1
-45
-60
-80
-45
-60
-80
60
50
-5
-6
2
BE
= 100 Ω,
MDTRACA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
1

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BDW64C Summary of contents

Page 1

... This rating is based on the capability of the transistor to operate safely in a circuit of mH 0.1 Ω -20 V. BE(off AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BDW64 BDW64A BDW64B BDW64C BDW64D ...

Page 2

... BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter -30 mA (BR)CEO C breakdown voltage Collector-emitter -40 V CEO CE cut-off current -100 V CB Collector cut-off V = -120 CBO current -100 -120 V CB Emitter cut-off ...

Page 3

... I - Collector Current - A C Figure 1. -3·0 -2·0 -2·5 -1·0 -1·5 -0· AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS125AD -2· -40° 25°C ...

Page 4

... BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS -10 -1·0 -0·1 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BDW64 BDW64A BDW64B BDW64C BDW64D -1·0 -10 -100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 5 ...

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