BDW64C Bourns Inc., BDW64C Datasheet - Page 2

• Manufacturer Part Number: BDW64C
• Description: Darlington Transistors 60W 6A PNP
• Manufacturer: Bourns Inc.

Specifications of BDW64C

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 6 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 750, 100
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
NOTES: 5. These parameters must be measured using pulse techniques, t
thermal characteristics
resistive-load-switching characteristics at 25°C case temperature
†
2
V
V
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
(BR)CEO
R
I
I
CE(sat)
R
I
BE(on)
V
h
CEO
CBO
EBO
t
t
θJC
θJA
on
off
FE
EC
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
PARAMETER
PARAMETER
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
Junction to case thermal resistance
Junction to free air thermal resistance
Turn-on time
Turn-off time
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
V
C
B
B
E
C
CE
CE
CE
CE
CE
CB
CB
CB
CB
CB
CB
CB
CB
CB
CB
EB
CE
CE
CE
BE(off)
=
=
=
= -30 mA
= -3 A
= -30 V
= -30 V
= -40 V
= -50 V
= -60 V
= -45 V
= -60 V
= -80 V
= -100 V
= -120 V
= -45 V
= -60 V
= -80 V
= -100 V
= -120 V
=
=
=
=
-12 mA
-60 mA
= 4.5 V
-6 A
-5 V
-3 V
-3 V
-3 V
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
B
B
B
B
B
B
E
E
E
E
E
E
E
E
E
E
C
C
C
C
C
C
B
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= -2 A
= -6 A
= -2 A
= -2 A
= -6 A
TEST CONDITIONS
I
R
B(on)
TEST CONDITIONS
L
= 10 Ω
= -12 mA
(see Note 5)
T
T
T
T
T
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
C
C
C
C
C
= 150°C
= 150°C
= 150°C
= 150°C
= 150°C
p
= 300 µs, duty cycle ≤ 2%.
†
R O D U C T
I
t
B(off)
p
= 20 µs, dc ≤ 2%
= 12 mA
Specifications are subject to change without notice.
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
AUGUST 1978 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
MIN
MIN
-100
-120
MIN
750
100
-45
-60
-80
TYP
TYP
TYP
1
5
20000
MAX
MAX
MAX
2.08
62.5
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-2.5
-2.5
-3.5
-5
-5
-5
-5
-5
-2
-4
°C/W
°C/W
UNIT
UNIT
UNIT
mA
mA
mA
µs
µs
V
V
V
V