FP25R12KS4C Infineon Technologies

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FP25R12KS4C

Manufacturer Part Number
FP25R12KS4C
Description
IGBT Transistors 1200V 25A PIM
Manufacturer
Infineon Technologies

Specifications of FP25R12KS4C

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
25 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
230 W
Maximum Operating Temperature
+ 125 C
Package / Case
EconoPIM2-24
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Packages
AG-ECONO2-1
Ic (max)
25.0 A
Vce(sat) (typ)
3.2 V
Technology
IGBT2 Fast
Housing
EconoPIM™ 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP25R12KS4C
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FP25R12KS4C
Manufacturer:
欧派克
Quantity:
20 000
Part Number:
FP25R12KS4C
Quantity:
117

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