FP25R12KS4C Infineon Technologies

FP25R12KS4C

Manufacturer Part Number

FP25R12KS4C

Description

IGBT Transistors 1200V 25A PIM

Manufacturer

Infineon Technologies

Specifications of FP25R12KS4C

Configuration

Hex

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

3.2 V

Maximum Gate Emitter Voltage

+/- 20 V

Continuous Collector Current At 25 C

25 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

230 W

Maximum Operating Temperature

+ 125 C

Package / Case

EconoPIM2-24

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Packages

AG-ECONO2-1

Ic (max)

25.0 A

Vce(sat) (typ)

3.2 V

Technology

IGBT2 Fast

Housing

EconoPIM 2

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FP25R12KS4C

Manufacturer:

EUPEC/Infineon

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FP25R12KS4C

Manufacturer:

欧派克

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FP25R12KS4C

Quantity:

117

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