CY62256VNLL-70SNXIT Cypress Semiconductor Corp, CY62256VNLL-70SNXIT Datasheet - Page 4

• Manufacturer Part Number: CY62256VNLL-70SNXIT
• Description: CY62256VNLL-70SNXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62256VNLL-70SNXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 256K (32K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Thermal Resistance
Data Retention Characteristics
Notes
Document #: 001-06512 Rev. *B
C
C
V
I
t
t
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CCDR
CDR
R
Parameter
Parameter
DR
IN
OUT
Parameter
[5]
Θ
Θ
[6]
V
CE
CC
JC
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
OUTPUT
Parameter
CC
[5]
V
INCLUDING
RTH
VTH
for Data Retention
R1
R2
CC
CC
JIG AND
Description
Description
Description
SCOPE
+ 0.3V.
50 pF
[5]
R1
t
CDR
1.8V
Equivalent to:
R2
Figure 1. AC Test Loads and Waveforms
(Over the Operating Range)
Figure 2. Data Retention Waveform
V
CE > V
V
or V
T
V
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
CC
IN
A
CC
> V
IN
= 25°C, f = 1 MHz,
= 1.4V,
= 3.0V
< 0.3V
CC
OUTPUT
CC
– 0.3V,
– 0.3V
DATA RETENTION MODE
Test Conditions
Test Conditions
Conditions
THÉ VENIN EQUIVALENT
V
GND
Value
V
1.750
1100
1500
DR
645
CC
< 5 ns
> 1.4V
R
th
[6]
10%
Com’l
Ind’l/Auto-A
Auto-E
ALL INPUT PULSES
90%
V
th
68.45
26.94
SOIC
1.8V
Min
1.4
t
RC
0
t
R
Max
6
8
90%
TSOPI
10%
87.62
23.73
Typ
0.1
< 5 ns
[2]
Ohms
Ohms
Ohms
Units
Volts
CY62256VN
RTSOPI
87.62
23.73
Max
50
3
6
Page 4 of 13
Unit
pF
pF
°C/W
°C/W
Unit
Unit
μA
ns
ns
V
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