CY62256VNLL-70SNXIT Cypress Semiconductor Corp, CY62256VNLL-70SNXIT Datasheet - Page 6

• Manufacturer Part Number: CY62256VNLL-70SNXIT
• Description: CY62256VNLL-70SNXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62256VNLL-70SNXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 256K (32K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 001-06512 Rev. *B
12. Device is continuously selected. OE, CE = V
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
15. Data I/O is high impedance if OE = V
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state.
17. During this period, the I/Os are in output state and input signals should not be applied.
DATA OUT
ADDRESS
DATA OUT
CURRENT
ADDRESS
DATA I/O
SUPPLY
V
WE
OE
CE
OE
CE
CC
NOTE 17
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
IH
LZCE
t
SA
.
t
HZOE
Figure 5. Write Cycle No. 1 (WE Controlled)
t
t
ACE
LZOE
IL
.
t
OHA
50%
t
DOE
Figure 3. Read Cycle No. 1
Figure 4. Read Cycle No. 2
t
AA
t
AW
t
RC
t
WC
t
RC
DATA
t
t
PWE
SD
IN
[12, 13]
[13, 14]
VALID
DATA VALID
[10, 15, 16]
DATA VALID
t
HA
t
HD
t
t
HZOE
HZCE
t
PD
50%
CY62256VN
IMPEDANCE
HIGH
Page 6 of 13
ICC
ISB
[+] Feedback