CY7C1315BV18-250BZXC Cypress Semiconductor Corp, CY7C1315BV18-250BZXC Datasheet - Page 12

• Manufacturer Part Number: CY7C1315BV18-250BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Write Cycle Descriptions
The write cycle description table for CY7C1311BV18 and CY7C1313BV18 follows.
Write Cycle Descriptions
The write cycle description table for CY7C1911BV18 follows.
Note
Document Number: 38-05620 Rev. *F
10. Is based on a write cycle that was initiated in accordance with the
BWS
NWS
BWS
H
H
H
H
different portions of a write cycle, as long as the setup and hold requirements are achieved.
H
H
L
L
L
L
L
L
0
0
0
/
BWS
NWS
L–H
L–H
H
H
H
H
L
L
L
L
K
–
–
1
1
/
L–H
L–H
L–H
L–H
K
–
–
–
–
L–H
L–H
K
–
–
L–H During the data portion of a write sequence
L–H During the data portion of a write sequence
L–H No data is written into the devices during this portion of a write operation.
L-H During the data portion of a write sequence
K
–
–
–
–
During the data portion of a write sequence, the single byte (D
During the data portion of a write sequence, the single byte (D
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
During the data portion of a write sequence
CY7C1311BV18 both nibbles (D
CY7C1313BV18 both bytes (D
CY7C1311BV18 both nibbles (D
CY7C1313BV18 both bytes (D
During the data portion of a write sequence
CY7C1311BV18 only the lower nibble (D
CY7C1313BV18 only the lower byte (D
CY7C1311BV18 only the lower nibble (D
CY7C1313BV18 only the lower byte (D
During the data portion of a write sequence
CY7C1311BV18 only the upper nibble (D
CY7C1313BV18 only the upper byte (D
CY7C1311BV18 only the upper nibble (D
CY7C1313BV18 only the upper byte (D
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
[2, 10]
[17:0]
[17:0]
[7:0]
[7:0]
) are written into the device.
) are written into the device.
) are written into the device.
) are written into the device.
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
Comments
[7:4]
[7:4]
table. NWS
Comments
) is written into the device, D
) is written into the device, D
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
[2, 10]
0
, NWS
1
[8:0]
[8:0]
, BWS
) is written into the device.
) is written into the device.
0
, BWS
1
, BWS
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
2
, and BWS
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
3
can be altered on
Page 12 of 32
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