CY7C1315CV18-250BZI Cypress Semiconductor Corp, CY7C1315CV18-250BZI Datasheet - Page 16

• Manufacturer Part Number: CY7C1315CV18-250BZI
• Description: CY7C1315CV18-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315CV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-07165 Rev. *D
V
V
V
V
V
V
I
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
13. Overshoot: V
14. All Voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
DDQ
Selection
Circuitry
+ 0.85V (Pulse width less than t
[12, 13, 14]
Description
106
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
GND ≤ V
OH
OH
OL
OL
Bypass Register
2
2
2
= 2.0 mA
= 100 μA
−
= −2.0 mA
= −100 μA
Test Conditions
1.5V (Pulse width less than t
CY7C1313CV18, CY7C1315CV18
CY7C1311CV18, CY7C1911CV18
1
1
1
I
≤ V
0
0
0
0
DD
Electrical Characteristics
CYC
Selection
Circuitry
0.65V
/2).
–0.3
Min
1.4
1.6
–5
DD
V
0.35V
DD
Max
Table.
0.4
0.2
5
+ 0.3
DD
Page 16 of 31
TDO
Unit
μA
V
V
V
V
V
V
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