CY7C1315CV18-250BZI Cypress Semiconductor Corp, CY7C1315CV18-250BZI Datasheet - Page 26

• Manufacturer Part Number: CY7C1315CV18-250BZI
• Description: CY7C1315CV18-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315CV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 001-07165 Rev. *D
29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
30. Outputs are disabled (High-Z) one clock cycle after a NOP.
31. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
applies to the whole diagram.
WPS
RPS
CQ
CQ
D
A
K
K
Q
C
C
NOP
t KHCH
1
t KH
t CQH
t KL
t
t SA
SC
A0
READ
2
t HC
t HA
t KHCH
t
t CQHCQH
CYC
t CYC
Figure 5. Read/Write/Deselect Sequence
A1
WRITE
3
t KHKH
t CLZ
t
KHKH
t
SD
t CQOH
D10
A2
Q00
READ
4
t CQOH
t HD
D11
Q01
t CO
t CCQO
t
t
DOH
SC
D12
t SD
CY7C1313CV18, CY7C1315CV18
A3
CY7C1311CV18, CY7C1911CV18
Q02
WRITE
5
t CCQO
t HC
DON’T CARE
[29, 30, 31]
D13
Q03
t CQDOH
t HD
D30
NOP
Q20
6
t
KH
D31
Q21
t CQD
t KL
D32
UNDEFINED
7
Q22
t CHZ
D33
Page 26 of 31
Q23
[+] Feedback