CY7C1361C-100BGC Cypress Semiconductor Corp, CY7C1361C-100BGC Datasheet - Page 11

• Manufacturer Part Number: CY7C1361C-100BGC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1361C-100BGC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ZZ Mode Electrical Characteristics
Truth Table
The Truth Table for CY7C1361C and CY7C1363C follows.
Document Number: 38-05541 Rev. *J
I
t
t
t
t
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Deselected cycle, power-down
Sleep mode, power-down
Read cycle, begin burst
Read cycle, begin burst
Write cycle, begin burst
Read cycle, begin burst
Read cycle, begin burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Read cycle, continue burst
Write cycle, continue burst
Write cycle, continue burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Read cycle, suspend burst
Write cycle, suspend burst
Write cycle, suspend burst
Notes
DDZZ
ZZS
ZZREC
ZZI
RZZI
5. X=”Don't Care.” H = Logic HIGH, L = Logic LOW.
6. WRITE = L when any one or more byte write enable signals and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
7. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
8. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
9. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
Parameter
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Cycle Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to sleep current
ZZ Inactive to exit sleep current
Description
Address
External
External
External
External
External
Current
Current
Current
Current
Current
Current
Used
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
CE
H
X
X
X
X
H
H
X
H
X
X
H
H
X
H
L
L
L
L
L
L
L
L
1
CE
ZZ > V
ZZ > V
ZZ < 0.2 V
This parameter is sampled
This parameter is sampled
X
X
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
L
2
CE
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
DD
DD
[5, 6, 7, 8, 9]
3
– 0.2 V
– 0.2 V
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Test Conditions
ADSP
X
H
H
X
H
H
H
H
H
X
X
H
H
H
X
X
H
X
L
L
L
L
X
ADSC
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
Commercial/
L
L
L
L
L
L
Automotive
Industrial
ADV WRITE OE CLK
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
X
. Writes may occur only on subsequent clocks
CY7C1361C/CY7C1363C
H
H
H
H
H
H
X
X
X
X
X
X
X
X
H
H
H
H
2t
L
L
L
L
L
Min
CYC
–
–
–
–
0
H
H
H
H
H
H
X
X
X
X
X
X
L
X
L
L
L
X
X
L
L
X
X
2t
2t
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
Max
50
60
X
CYC
CYC
–
–
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Page 11 of 34
DQ
Q
D
Q
Q
Q
D
D
Q
Q
D
D
Unit
mA
mA
ns
ns
ns
ns
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