CY8C3866LTI-023 Cypress Semiconductor Corp, CY8C3866LTI-023 Datasheet - Page 103

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CY8C3866LTI-023

Manufacturer Part Number
CY8C3866LTI-023
Description
CY8C3866LTI-023
Manufacturer
Cypress Semiconductor Corp
Series
PSOC™ 3 CY8C38xxr
Datasheet

Specifications of CY8C3866LTI-023

Core Processor
8051
Core Size
8-Bit
Speed
67MHz
Connectivity
EBI/EMI, I²C, LIN, SPI, UART/USART, USB
Peripherals
CapSense, DMA, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 5.5 V
Data Converters
A/D 2x20b, D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
11.4 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.4.1 Flash
Table 11-58. Flash DC Specifications
Table 11-59. Flash AC Specifications
Document Number: 001-11729 Rev. *R
T
T
T
Parameter
Parameter
WRITE
ERASE
BULK
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time,
including JTAG or SWD, and other
overhead
Flash data retention time, retention
period measured from last erase
cycle
Description
Description
A
≤ 85 °C and T
Figure 11-66. Clock to Output Performance
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
DDD
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
J
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
pin
Conditions
Conditions
1.71
Min
Min
20
10
PSoC
Typ
Typ
15
10
5
®
3: CY8C38 Family
Max
Max
5.5
20
13
35
15
7
5
Data Sheet
Page 103 of 129
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