VSKH250-12PBF Vishay, VSKH250-12PBF Datasheet - Page 3

• Manufacturer Part Number: VSKH250-12PBF
• Description: SCR Modules 250 Amp 1200 Volt 7345 Amp IFSM
• Manufacturer: Vishay

Specifications of VSKH250-12PBF

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Package / Case: MAGN-A-PAK
• Breakover Current Ibo Max: 8900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• The table above shows the increment of thermal resistance R
Document Number: 93581
Revision: 02-Jul-10
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum resistance, case to heatsink
per module
Mounting torque
± 10 %
Approximate weight
Case style
R CONDUCTION PER JUNCTION
DEVICE
VSK.250
VSK.270
VSK.320
0.009
0.008
0.008
180°
MAP to heatsink
busbar to MAP
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SINUSOIDAL CONDUCTION
Standard Recovery Diodes, 250 A to 320 A
0.010
0.012
0.010
120°
AT T
(MAGN-A-PAK Power Modules)
J
0.014
0.014
0.013
MAXIMUM
90°
SYMBOL
T
R
R
J
, T
thJC
thCS
Stg
0.020
0.020
0.020
60°
DC operation
Mounting surface flat, smooth and
greased
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
0.032
0.032
0.032
thJC
30°
TEST CONDITIONS
when devices operate at different conduction angles than DC
VSK.250, VSK.270, VSK.320 Series
0.007
0.007
0.007
180°
RECTANGULAR CONDUCTION
0.011
0.011
0.011
120°
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AT T
J
0.015
0.015
0.015
MAXIMUM
90°
Vishay Semiconductors
VSK.250 VSK.270 VSK.320
0.16
0.021
0.020
0.020
60°
- 40 to 150
VALUES
8 to 10
4 to 6
MAGN-A-PAK
0.035
800
0.033
0.033
0.033
30
30°
0.125
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UNITS
K/W
UNITS
K/W
Nm
oz.
°C
g
3