VSKH250-12PBF Vishay, VSKH250-12PBF Datasheet - Page 9

• Manufacturer Part Number: VSKH250-12PBF
• Description: SCR Modules 250 Amp 1200 Volt 7345 Amp IFSM
• Manufacturer: Vishay

Specifications of VSKH250-12PBF

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Package / Case: MAGN-A-PAK
• Breakover Current Ibo Max: 8900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93581
Revision: 02-Jul-10
Fig. 25 - Forward Power Loss Characteristics
400
350
300
250
200
150
100
50
0
0
50
Average F orward Current (A)
R MS Limit
180°
120°
90°
60°
30°
100
[e-mail], [e-mail],
150
1400
1200
1000
700
600
500
400
300
200
100
800
600
400
200
For technical questions within your region, please contact one of the following:
Standard Recovery Diodes, 250 A to 320 A
0
0
0
0
200
Conduction Angle
VSK.320.. S eries
T = 150°C
J
100
250
100
T otal RMS Output Current (A)
(MAGN-A-PAK Power Modules)
T otal Output Current (A)
300
200
200
Fig. 27 - Forward Power Loss Characteristics
Fig. 28 - Forward Power Loss Characteristics
350
300
S ingle Phase Bridge
2 x VSK.320.. S eries
(R ec t)
(S ine)
180°
180°
300
Connec ted
T = 150°C
(S ine)
180°
VSK.320.. S eries
J
Per Junc tion
400
T = 150°C
J
400
500
DC
VSK.250, VSK.270, VSK.320 Series
600
500
0
0
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
50
50
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Fig. 26 - Forward Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
0
75
75
0
RMS Limit
180°
120°
DC
90°
60°
30°
100
100
100
Average Forward Current (A)
125
125
Vishay Semiconductors
200
150
150
300
Conduc tion Period
VSK.320.. S eries
Per Junction
T = 150°C
J
400
500
600
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