VSKH250-12PBF Vishay, VSKH250-12PBF Datasheet - Page 7

• Manufacturer Part Number: VSKH250-12PBF
• Description: SCR Modules 250 Amp 1200 Volt 7345 Amp IFSM
• Manufacturer: Vishay

Specifications of VSKH250-12PBF

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Package / Case: MAGN-A-PAK
• Breakover Current Ibo Max: 8900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93581
Revision: 02-Jul-10
[e-mail], [e-mail],
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For technical questions within your region, please contact one of the following:
Standard Recovery Diodes, 250 A to 320 A
0
0
0
0
0
0
50
100
T otal RMS Output Current (A)
(MAGN-A-PAK Power Modules)
T otal Output Current (A)
T otal Output Current (A)
200
100 150 200 250 300 350 400
200
Fig. 16 - Forward Power Loss Characteristics
Fig. 17 - Forward Power Loss Characteristics
Fig. 18 - Forward Power Loss Characteristics
(Rec t)
(S ine)
180°
180°
(Rec t)
120°
400
300
T hree Phase Bridge
3 x VSK.270.. S eries
S ingle Phase Bridge
2 x VSK.270.. S eries
(S ine)
180°
Connec ted
T = 150°C
VSK.270.. S eries
Connec ted
T = 150°C
Per Junc tion
J
400
T = 150°C
J
J
600
500
DC
VSK.250, VSK.270, VSK.320 Series
800
600
0
0
0
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
25
50
50
50
[e-mail]
75
75
75
100
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100
125
125
125
Vishay Semiconductors
150
150
150
www.vishay.com
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