TISP7180F3D-S Bourns Inc., TISP7180F3D-S Datasheet - Page 2

• Manufacturer Part Number: TISP7180F3D-S
• Description: Sidacs Triple Element Bidirectional
• Manufacturer: Bourns Inc.

Specifications of TISP7180F3D-S

• Breakover Current Ibo Max: 4.3 A
• Rated Repetitive Off-state Voltage Vdrm: 145 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 5 V
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
Absolute Maximum Ratings, T A = 25
Repetitive peak off-state voltage, 0 °C < T
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current, 0 °C < T
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
2. See Thermal Information for derated I
3. Above 70 °C, derate I
Initially, the TISP device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
®
TSM
linearly to zero at 150 °C lead temperature.
°
A
C (Unless Otherwise Noted)
< 70 °C
Rating
A
< 70 °C (see Notes 1 and 3)
PPSM
values 0 °C < T
A
< 70 °C and Applications Information for details on wave shapes.
A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
Symbol
I
di
V
PPSM
I
T
TSM
DRM
T
T
stg
/dt
J
-65 to +150
-65 to +150
Value
100
120
145
180
200
220
240
275
270
330
190
100
175
110
250
4.3
95
70
70
70
50
45
Unit
A/µs
®
°C
°C
A
A
V
device