TISP2180F3DR Bourns Inc., TISP2180F3DR Datasheet

TISP2180F3DR

Manufacturer Part Number

TISP2180F3DR

Description

Sidacs

Manufacturer

Bourns Inc.

Datasheet

1.TISP1072F3DR.pdf (12 pages)

Specifications of TISP2180F3DR

Breakover Current Ibo Max

4 A

Rated Repetitive Off-state Voltage Vdrm

145 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

3 V

Mounting Style

SMD/SMT

Package / Case

SO-8

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TISP2180F3DR

Manufacturer:

Quantity:

10 000

Current page: 1 of 12
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Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Planar Passivated Junctions

Low Off-State Current <10 A

Rated for International Surge Wave Shapes

These dual forward-conducting unidirectional over-voltage

protectors are designed for the overvoltage protection of

ICs used for the SLIC (Subscriber Line Interface Circuit)

function. The IC line driver section is typically powered with

0 V and a negative supply. The TISP1xxxF3 limits voltages

that exceed these supply rails and is offered in two voltage

variants to match typical negative supply voltage values.

High voltages can occur on the line as a result of exposure

to lightning strikes and a.c. power surges. Negative tran-

sients are initially limited by breakdown clamping until the

voltage rises to the breakover level, which causes the

device to crowbar. The high crowbar holding current pre-

vents d.c. latchup as the current subsides. Positive tran-

sients are limited by diode forward conduction. These pro-

tectors are guaranteed to suppress and withstand the listed

international lightning surges on any terminal pair.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

SEPTEMBER 1993 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Description

How To Order

TISP1xxxF3 D, Small-outline

‘1072F3

‘1082F3

Insert xxx value corresponding to protection voltages of 072 and 082

Device

Waveshape

10/1000 µs

DEVICE

10/160 µs

10/700 µs

10/560 µs

.......................................UL Recognized Component

2/10 µs

8/20 µs

Package

- 58

- 66

DRM

GR-1089-CORE

IEC 61000-4-5

ITU-T K.20/21

FCC Part 68

Standard

- 72

- 82

(BO)

Tape And Reeled

Carrier

TSP

TISP1xxxF3 Overvoltage Protector Series

TISP1xxxF3DR-S

Order As

DUAL FORWARD-CONDUCTING UNIDIRECTIONAL

D Package (Top View)

Device Symbol

THYRISTOR OVERVOLTAGE PROTECTORS

Terminals T, R and G correspond to the

alternative line designators of A, B and C

NC - No internal connection

TISP1072F3,TISP1082F3

SD1XAA

Related parts for TISP2180F3DR

TISP2180F3DR Summary of contents

Page 1

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘1072F3 - ‘1082F3 - Planar Passivated Junctions Low Off-State Current <10 A Rated for International ...

Page 2

TISP1xxxF3 Overvoltage Protector Series Description (continued) High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover ...

Page 3

TISP1xxxF3 Overvoltage Protector Series Electrical Characteristics for T and and G Terminals, T Parameter Repetitive peak off DRM D DRM state current V Breakover voltage dv/dt = -250 V/ms, R (BO) dv/dt ≤ ...

Page 4

TISP1xxxF3 Overvoltage Protector Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-current Characteristic for Terminals R and and G V ...

Page 5

TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 0.1 0.01 0.001 - Junction Temperature ...

Page 6

TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and and G Terminals HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 I (BO) 0.4 0 0.2 0.1 0.09 0.08 0.07 ...

Page 7

TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CAPACITANCE TERMINAL VOLTAGE (POSITIVE) 200 Third Terminal = 0 to -50 V '1072F3 150 '1082F3 100 0. ...

Page 8

TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0.1 0.01 0.001 - Junction Temperature - °C J Figure ...

Page 9

TISP1xxxF3 Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION 0· Current Duration - s Figure 18. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without ...

Page 10

TISP1xxxF3 Overvoltage Protector Series Electrical Characteristics The electrical characteristics of a TISP ¤ depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature ...

Page 11

TISP1xxxF3 Overvoltage Protector Series Protection Voltage The protection voltage increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on (BO) the rate of current rise, di/dt, when the TISP tions can be estimated by ...

Page 12

TISP1xxxF3 Overvoltage Protector Series Longitudinal Balance Figure 21 shows a three terminal TISP ¤ terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then C ...

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