TISP2180F3DR Bourns Inc., TISP2180F3DR Datasheet - Page 2

• Manufacturer Part Number: TISP2180F3DR
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP2180F3DR

• Breakover Current Ibo Max: 4 A
• Rated Repetitive Off-state Voltage Vdrm: 145 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially
limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These pro-
tectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
I
I
C
NOTE
Description (continued)
Absolute Maximum Ratings, T
Electrical Characteristics for R and T Terminal Pair, T
Repetitive peak off-state voltage, 0 °C < T
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current, 0 °C < T
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
DRM
D
off
TISP1xxxF3 Overvoltage Protector Series
Repetitive peak off-
state current
Off-state current
Off-state capacitance
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
4: Further details on capacitance are given in the Applications Information section.
2. Initially the TISP
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Parameter
initial conditions.
®
must be in thermal equilibrium with 0 °C < T
V
V
f = 100 kHz, V
V
(see Note 4)
A
D
D
D
= 25 °C (Unless Otherwise Noted)
= ±V
= ±50 V
= 0
DRM
A
< 70 °C
Rating
, 0 °C < T
A
< 70 °C (see Notes 1 and 3)
d
= 100 mV
A
< 70 °C
A
Test Conditions
= 25 °C (Unless Otherwise Noted)
J
<70 °C. The surge may be repeated after the TISP
Customers should verify actual device performance in their specific applications.
‘1072F3
‘1082F3
Symbol
I
di
V
PPSM
I
Specifications are subject to change without notice.
T
TSM
DRM
T
T
stg
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
/dt
J
Min
0.08
Typ
-65 to +150
-65 to +150
Value
120
250
-58
-66
4.3
80
50
70
60
55
38
50
50
45
35
Max
±10
±10
0.5
®
returns to its
Unit
Unit
A/µs
µA
µA
pF
°C
°C
V
A
A