BT134W-600E T/R NXP Semiconductors, BT134W-600E T/R Datasheet - Page 3

Triacs TAPE-7 TRIAC

BT134W-600E T/R

Manufacturer Part Number
BT134W-600E T/R
Description
Triacs TAPE-7 TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT134W-600E T/R

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
11 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.5 V @ 2 A
Mounting Style
SMD/SMT
Package / Case
SOT-223
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT134W-600E,115
Philips Semiconductors
August 1997
Triacs
sensitive gate
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
1000
on-state current I
12
10
1.4
1.2
0.8
0.6
0.4
0.2
100
8
6
4
2
0
1
0
10
1
ITSM / A
1
10us
0
Ptot / W
ITSM / A
T2- G+ quadrant
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
0.2
100us
dI /dt limit
T
T(RMS)
TSM
0.4
10
Number of cycles at 50Hz
1
TSM
, versus number of cycles, for
, where
IT(RMS) / A
, versus pulse width t
BT134W
BT134W
BT134W
0.6
1ms
T / s
I
T
I
Tj initial = 25 C max
T
Tj initial = 25 C max
p
0.8
100
= conduction angle.
20ms.
T
10ms
T
Tsp(max) / C
tot
1
120
90
60
30
, versus rms
I TSM
I TSM
= 180
time
time
p
100ms
, for
1.2
1000
104
107
110
113
116
119
122
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
1.2
0.8
0.6
0.4
0.2
Fig.4. Maximum permissible rms current I
GT
1
0
1.5
0.5
1.6
1.4
1.2
0.8
0.6
0.4
-50
2
1
0
0.01
(T
IT(RMS) / A
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
versus solder point temperature T
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT134W
BT134W
Tsp / C
BT136
Tj / C
50
50
BT134W series E
sp
Product specification
1
108˚C.
100
100
108 C
sp
.
Rev 1.200
T(RMS)
150
10
150
,
j
.

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