BT134W-600E T/R NXP Semiconductors, BT134W-600E T/R Datasheet - Page 4

• Manufacturer Part Number: BT134W-600E T/R
• Description: Triacs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT134W-600E T/R

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 11 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 2 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT134W-600E,115

Philips Semiconductors
August 1997
Triacs
sensitive gate
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
IGT(25 C)
(T
3
2
1
0
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT136D
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
1.5
0.5
0.01
10
100
2
1
0
0.1
1
10
0
1
10us
0
IT / A
dVD/dt (V/us)
Tj = 125 C
Tj = 25 C
dV
Vo = 1.0 V
Rs = 0.21 Ohms
Zth j-sp (K/W)
D
/dt versus junction temperature T
0.1ms
0.5
pulse width t
1ms
unidirectional
50
BT134W
typ
tp / s
Tj / C
VT / V
10ms
BT134W
1
BT134W series E
P
D
bidirectional
p
0.1s
.
100
Product specification
t
p
max
1.5
1s
th j-sp
t
, versus
Rev 1.200
j
.
10s
150
2