BTA212X-600D NXP Semiconductors, BTA212X-600D Datasheet - Page 4

• Manufacturer Part Number: BTA212X-600D
• Description: Triacs 600V 12A
• Manufacturer: NXP Semiconductors

Specifications of BTA212X-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 17A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA212X-600D,127

Philips Semiconductors
June 2003
Three quadrant triacs
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
20
15
10
100
1000
on-state current I
5
0
80
60
40
20
100
0
0
10
Ptot / W
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
1
T(RMS)
TSM
5
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
10
= conduction angle.
100
20ms.
10ms
T
T
Ths(max) / C
tot
120
30
90
60
, versus rms
= 180
I TSM
I TSM
time
time
p
100ms
, for
15
1000
45
65
85
105
125
4
Fig.5. Maximum permissible repetitive rms on-state
current I
V
Fig.4. Maximum permissible rms current I
15
10
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
versus heatsink temperature T
GT
currents, f = 50 Hz; T
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
BTA212X series D, E and F
0
0
0.1
surge duration / s
BT138X
Tj / C
Ths / C
50
50
56 C
hs
Product specification
1
56˚C.
100
100
hs
.
Rev 3.000
T(RMS)
150
10
150
,
j
.